”EPITAXIAL GROWTH OF SiC BY CHEMICAL VAPOR DEPOSITION AND APPLICATION TO ELECTRONIC DEVICES”
December 1987 Department of Electrical Engineering Kyoto University
「化学気相成長法によるSiCのエピタキシャル成長と電子デバイスへの応用」（1987年京都大学）
CONTENTS
PREFACE ……………. i
ACKNOWLEDGEMENTS …… iii
I. INTRODUCTION …….. 1
References ……….. 8
II. CVD GROWTH OF 3C-SiC ON Si SUBSTRATES …….. 10
1. Introduction ….. 10
2. CVD apparatus and growth procedures ……… 10
3. Carbonized buffer layers ………………. 14
3-1. Characterization of carbonized buffer layers …. 14
3-2. Epitaxial relationship ……………. 18
4. Crystallinity of grown layers ………….. 20
4-1. Dependence for Si/C ratio ………….. 20
4-2. Dependence for thickness …………… 26
5. Growth on Si(111), (110) and (211) ……… 28
6. Attempt for low temperature growth ……… 35
7. Summary …………………………….. 41
References …………………………… 43
III. GROWTH ON OFF ORIENTED SUBSTRATES ……….. 44
1. Introduction ….. 44
2. Antiphase disorder in grown layers on Si(100) ……… 46
2-1. Observation of antiphase boundaries …. 46
2-2. Elimination of antiphase boundaries …. 48
2-3. Surface observation by RHEED ……….. 56
3. Growth on spherically polished Si(111) ….. 64
4. Summary …………………………….. 68
References …………………………… 69
IV. ELECTRICAL PROPERTIES OF GROWN LAYERS AND IMPURITY DOPING …. 71
1. Introduction ….. 71
2. Electrical properties of undoped layers …. 72
2-1. Hall measurement ………………….. 72
2-2. EBIC observation ………………….. 77
2-3. Schottky barrier ………………….. 79
3. Al and B doped layers …………………. 84
3-1. B-doping …………………………. 84
3-2. Al-doping ………………………… 86
4. Photoluminescence …………………….. 94
5. Summary …………………………….. 95
References …………………………… 96
V. ION IMPLANTATION INTO 3C-SiC GROWN LAYERS AND APPLICATION TO MOSFET’S …. 97
1. Introduction ….. 97
2. Activation of implanted donors …………. 98
3. Fabrication of p-n junction diodes ……… 102
4. Fabrication of MOSFET’s ……………….. 104
5. Summary …………………………….. 108
References …………………………… 109
VI. CVD GROWTH ON 6H-SiC(0001) ……………… 111
1. Introduction ….. 111
2. CVD growth ………………………….. 112
3. Identification of polytypes ……………. 122
4. Fabrication of Schottky and p-n junction diodes ……. 127
5. Summary …………………………….. 134
References …………………………… 134
VII. CONCLUSIONS …………………………… 136
References …………………………… 138
List of Publication …………………… 139
APPENDIX ……………………………… 142
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