V. ION IMPLANTATION INTO 3C-SiC GROWN LAYERS AND APPLICATION TO MOSFET’S
Sources and Permissions（掲載図の出典・許諾情報）
Figs. 1, 3, 6, and 7
Reproduced from Figs. 6, 9, 12, and 13, respectively, in the following article:
K. Shibahara, T. Takeuchi, S. Nishino, and H. Matsunami, “Electrical–properties of undoped and ion-implanted cubic SiC grown on Si(100) by chemical vapor-deposition,” Jpn. J. Appl. Phys. 28 (1989) 1341–1347.
Permission granted by The Japan Society of Applied Physics.
Figs. 4 and 5
Reproduced from Figs. 5 and 7, respectively, in the following article:
K. Shibahara, T. Takeuchi, T. Saitoh, S. Nishino, and H. Matsunami, “Inversion-type MOS field effect transistors using CVD grown cubic SiC on Si,” Proc. Mat. Res. Soc. 97 (1987) 247–252.
Reprinted with permission.
Fig. 10
Reproduced from Fig. 2 in the following article:
K. Shibahara, T. Saito, S. Nishino, and H. Matsunami, “Fabrication of inversion-type n-channel MOSFETs using cubic SiC on Si(100),” IEEE Electron Device Lett. 7 (1986) 692–693. doi.org
© 1986 IEEE. Reprinted with permission.