VI. CVD GROWTH ON 6H-SiC(0001)
Sources and Permissions（掲載図の出典・許諾情報）
Figs. 10 and 11
Reproduced from Figs. 2 and 3, respectively, in the following article:
N. Kuroda, K. Shibahara, W. Yoo, S. Nishino, and H. Matsunami, “Step-Controlled VPE Growth of SiC Single Crystals at Low Temperatures,” Extended Abstracts of the 19th Conference on Solid State Devices and Materials (SSDM 1987), 227–230. doi.org
Permission granted by The Japan Society of Applied Physics.
Figs. 19, 22, and 26
Reproduced from Figs. 1, 2, and 5, respectively, in the following article:
K. Shibahara, N. Kuroda, S. Nishino, and H. Matsunami, “Fabrication of p-n-junction diodes using homoepitaxially grown 6H-SiC at low temperature by chemical vapor-deposition,” Jpn. J. Appl. Phys. 26 (1987) L1815–L1817.
Permission granted by The Japan Society of Applied Physics.
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