IV. ELECTRICAL PROPERTIES OF GROWN LAYERS AND IMPURITY DOPING
Sources and Permissions（掲載図の出典・許諾情報）
Figs. 3 and 5 Reproduced from Figs. 3 and 4, respectively, in the following article: K. Shibahara, T. Takeuchi, S. Nishino, and H. Matsunami, “Electrical–properties of undoped and ion-implanted cubic SiC grown on Si(100) by chemical vapor-deposition,” Jpn. J. Appl. Phys. 28 (1989) 1341–1347. Permission granted by The Japan Society of Applied Physics.
Fig. 9 Reproduced from Fig. 1 in the following article: K. Shibahara, N. Kuroda, S. Nishino, and H. Matsunami, “Fabrication of p-n-junction diodes using homoepitaxially grown 6H-SiC at low temperature by chemical vapor-deposition,” Jpn. J. Appl. Phys. 26 (1987) L1815–L1817. Permission granted by The Japan Society of Applied Physics.
