”EPITAXIAL GROWTH OF SiC BY CHEMICAL VAPOR DEPOSITION AND APPLICATION TO ELECTRONIC DEVICES”
December 1987 Department of Electrical Engineering Kyoto University
「化学気相成長法によるSiCのエピタキシャル成長と電子デバイスへの応用」（1987年京都大学）
CONTENTS
PREFACE i
ACKNOWLEDGEMENTS iii
I. INTRODUCTION 1
References 8
II. CVD GROWTH OF 3C-SiC ON Si SUBSTRATES 10
1. Introduction 10
2. CVD apparatus and growth procedures 10
3. Carbonized buffer layers 14
3-1. Characterization of carbonized buffer layers 14
3-2. Epitaxial relationship 18
4. Crystallinity of grown layers 20
4-1. Dependence for Si/C ratio 20
4-2. Dependence for thickness 26
5. Growth on Si(111), (110) and (211) 28
6. Attempt for low temperature growth 35
7. Summary 41
References 43
III. GROWTH ON OFF ORIENTED SUBSTRATES 44
1. Introduction 44
2. Antiphase disorder in grown layers on Si(100) 46
2-1. Observation of antiphase boundaries 46
2-2. Elimination of antiphase boundaries 48
2-3. Surface observation by RHEED 56
3. Growth on spherically polished Si(111) 64
4. Summary 68
References 69
IV. ELECTRICAL PROPERTIES OF GROWN LAYERS AND IMPURITY DOPING 71
1. Introduction 71
2. Electrical properties of undoped layers 72
2-1. Hall measurement 72
2-2. EBIC observation 77
2-3. Schottky barrier 79
3. Al and B doped layers 84
3-1. B-doping 84
3-2. Al-doping 86
4. Photoluminescence 94
5. Summary 95
References 96
V. ION IMPLANTATION INTO 3C-SiC GROWN LAYERS AND APPLICATION TO MOSFET’S 97
1. Introduction 97
2. Activation of implanted donors 98
3. Fabrication of p-n junction diodes 102
4. Fabrication of MOSFET’s 104
5. Summary 108
References 109
VI. CVD GROWTH ON 6H-SiC(0001) 111
1. Introduction 111
2. CVD growth 112
3. Identification of polytypes 122
4. Fabrication of Schottky and p-n junction diodes 127
5. Summary 134
References 134
VII. CONCLUSIONS 136
References 138
List of Publication 139
APPENDIX 142