III. GROWTH ON OFF ORIENTED SUBSTRATES
Sources and Permissions（掲載図の出典・許諾情報）
Figs. 6 and 8
Reproduced from Figs. 5 and 9, respectively, in the following article:
K. Shibahara, S. Nishino, and H. Matsunami, “Surface-morphology of cubic SiC(100) grown on Si(100) by chemical vapor deposition,” J. Crystal Growth 78 (1986) 538–544.
© 1986 Elsevier. Reprinted with permission.
Fig. 9
Reproduced from Fig. 3 in the following article:
K. Shibahara, S. Nishino, and H. Matsunami, “Antiphase-domain-free growth of cubic SiC on Si(100),” Appl. Phys. Lett. 50 (1987) 1888–1890.
© 1987 American Institute of Physics. Reprinted with permission.
Fig. 12
Reproduced from Fig. 3 in the following article:
K. Shibahara, T. Takeuchi, S. Nishino, and H. Matsunami, “Electrical–properties of undoped and ion-implanted cubic SiC grown on Si(100) by chemical vapor-deposition,” Jpn. J. Appl. Phys. 28 (1989) 1341–1347.
Permission granted by The Japan Society of Applied Physics.
→第4章 IV. ELECTRICAL PROPERTIES OF GROWN LAYERS AND IMPURITY DOPING
→目次 Table of Contents
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証言記録 ステップ制御エピタキシー 黒田尚孝氏と芝原健太郎の実現
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芝原健太郎・松波研究室｜世界初の反転型SiC-MOSFET動作実証―IEEE EDL 1986 Kentaro Shibahara and the Matsunami Laboratory | World’s First Demonstration of an Inversion-Type SiC MOSFET — IEEE EDL 1986
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世界初反転型SiC-MOSFET実現：松波弘之教授が語る芝原健太郎の歩み The First Successful Inversion-Type SiC-MOSFET: Prof. Hiroyuki Matsunami on the Career of Dr. Kentaro Shibahara
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芝原健太郎と松波弘之：ステップ制御エピタキシーとSSDM賞/ Kentaro Shibahara and Hiroyuki Matsunami: Step-Controlled Epitaxy and the SSDM Award
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『タウア・ニン最新VLSIの基礎』監訳の背景・エピソードと各界からの評価 Background, Editorial Insights, and Reception of the Japanese Translation of Fundamentals of Modern VLSI Devices
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6H-SiC基板上へのSiC薄膜結晶成長 Homohepiaxial growth of SiC Growth on 6H-SiC
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Extended Abstract “Step-Controlled VPE Growth of SiC Single Crystals at Low Temperatures”
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「RHEED―基礎的理論とその応用例」研究会資料：1986年10月22日 Technical Meeting Document: “RHEED — Basic Theory and Application Examples” : October 22, 1986
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「Si基板上β-SiCに関する諸話題」研究会資料：1986年4月30日 Technical Meeting Document: “Topics on β-SiC on Si Substrates”: April 30, 1986
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