III. GROWTH ON OFF ORIENTED SUBSTRATES
（準備中）
Sources and Permissions（掲載図の出典・許諾情報）
Figs. 6 and 8
Reproduced from Figs. 5 and 9, respectively, in the following article:
K. Shibahara, S. Nishino, and H. Matsunami, “Surface-morphology of cubic SiC(100) grown on Si(100) by chemical vapor deposition,” J. Crystal Growth 78 (1986) 538–544.
© 1986 Elsevier. Reprinted with permission.
Fig. 9
Reproduced from Fig. 3 in the following article:
K. Shibahara, S. Nishino, and H. Matsunami, “Antiphase-domain-free growth of cubic SiC on Si(100),” Appl. Phys. Lett. 50 (1987) 1888–1890.
© 1987 American Institute of Physics. Reprinted with permission.
Fig. 12
Reproduced from Fig. 3 in the following article:
K. Shibahara, T. Takeuchi, S. Nishino, and H. Matsunami, “Electrical–properties of undoped and ion-implanted cubic SiC grown on Si(100) by chemical vapor-deposition,” Jpn. J. Appl. Phys. 28 (1989) 1341–1347.
Permission granted by The Japan Society of Applied Physics.