Kentaro Shibahara is a researcher specializing in semiconductor devices and process technologies. During his graduate studies at Kyoto University, he engaged in research on SiC semiconductors and successfully fabricated and demonstrated the world’s first inversion-type SiC MOSFET. He also realized step-controlled epitaxy, for which he received the SSDM Award.
After working in industry, he joined Hiroshima University as an Associate Professor, where he conducted research primarily in silicon semiconductor device physics and advanced scaling process technologies, while also serving in leading roles in major international conferences—including as Chair of the CMOS device division at SSDM—and broadly contributing to conference organization and program committees. Through both these research activities and academic service, he played a leading role in the field and contributed to its advancement.
He also contributed to education by supervising the Japanese translation of the standard textbook in advanced CMOS devices, Fundamentals of Modern VLSI Devices by Taur and Ning.
Links & Research Keywords
Major Professional Activities
Academic Databases
・KAKEN – Kentaro Shibahara (National Institute of Informatics, Japan)
・ResearchGate – Kentaro Shibahara
Research Keywords (Selected by the Editor)
・SiC Crystal Growth
・SiC-MOSFET
・Off-Oriented Substrates / APDs / RHEED / “Step-Controlled Epitaxy”
・Highly Integrated DRAM (DEL(NABLA)-shaped Trench, 256-Mb DRAM, 1-Gb DRAM)
・Emerging Nanoscale Devices / Advanced Ultra-Small MOSFETs
・Ultra-Shallow Junction Formation (Ultra-Shallow Junctions)
・Ion Implantation (Sb Ion Implantation, Oblique-Angle Ion Implantation, Pre-Amorphization Implantation, Doping)
・Laser Annealing / Flash Lamp Annealing
・Heat-assist
・Silicide Technology (Dopant Incorporation)
・Metal Gate (Mo Electrode / Nitrogen Indiffusion)
・Full-Silicide (FUSI) Gate (Fully Silicided Gate: NiSi / Pd2Si, Dopant Predoping)
・Ge-Based Semiconductors
・SIMS Depth Profile Analysis
Education and Professional Experience
1960 Born in Kobe, Japan
1985 Master’s Degree, Graduate School of Engineering, Kyoto University
1988 Ph.D. in Engineering, Graduate School of Engineering, Kyoto University
February 1988 – January 1995 NEC Corporation, Japan
February 1995 – April 2011
Associate Professor, Hiroshima University
Research Center for Integrated Systems (from February 1995)
Research Center for Nanodevices and Systems (Nanodevice Research Institute) (from May 1995)
Research Institute for Nanodevice and Bio Systems (RNBS) (from May 2008)
(currently Research Institute for Semiconductor Engineering (RICE))
April 21, 2011 Passed away