Professor Kentaro Shibahara achieved the world’s first successful homoepitaxial growth of high-quality 6H-SiC by introducing an off-angle to the 6H-SiC(0001) substrate. His pioneering work, known as “Step-Controlled Epitaxy,” established a key foundation for the practical realization of modern SiC power devices and is widely recognized as a major milestone in the field.
Committee Chair Taniguchi and Shibahara
certificate
Committee Chair Taniguchi and Shibahara
Award winners (from right): Naotaka Kuroda,Kentaro Shibahara,Woo Sik Yoo,Shigehiro Nishino,and Hiroyuki Matsunami
